EFFECT OF MANGANESE AND NICKEL ON THE FORMATION OF STRUCTURAL DEFECTSIN SILICON

X-ray topography and IR microscopy have been used to study the formati on of oxygen-silicon complexes including Mn and Ni atoms in silicon di ffusionally doped with these impurities and with various oxygen concen trations. The factors that determine their formation rate are establis hed: (a) the oxygen concentration, (b) subsequent low-temperature proc essing, (c) subsequent high-temperature processing, (d) the cooling ra te after the diffusion of impurities. The effect of the interaction of the Mn and Ni impurities on the formation of structural defects when they diffuse into the silicon successively or simultaneously is studie d. (C) 1996 American Institute of Physics.