AMORPHOUS HYDRATED SILICON FILMS DEPOSITED AT ELEVATED-TEMPERATURES

Authors
GOLIKOVA OA KAZANIN MM KONKOV OI KUDOYAROVA VK TERUKOV EI
Citation
Oa. Golikova et al., AMORPHOUS HYDRATED SILICON FILMS DEPOSITED AT ELEVATED-TEMPERATURES, Semiconductors, 30(3), 1996, pp. 226-230
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
30
Issue
3
Year of publication
1996
Pages
226 - 230
Database
ISI
SICI code
1063-7826(1996)30:3<226:AHSFDA>2.0.ZU;2-9
Abstract
The results for optical, electrical, and structural parameters of undo ped a-Si:H films deposited at T-s=200-400 degrees C are presented. The reactor type (diode or triode), SiH4 content in the gas mixture, and the gases (Ar, He, and H-2) were varied. Prepared at T-s=400 degrees C and under optimization of other conditions, the a-Si:H films is chara cterized as a device-quality material with a low hydrogen content (dow n to 3 at. %). (C) 1996 American Institute of Physics.