EFFECT OF GAMMA-IRRADIATION ON THE PROPERTIES OF POROUS SILICON

Authors
ASTROVA EV VITMAN RF EMTSEV VV LEBEDEV AA POLOSKIN DS REMENYUK AD RUD YV
Citation
Ev. Astrova et al., EFFECT OF GAMMA-IRRADIATION ON THE PROPERTIES OF POROUS SILICON, Semiconductors, 30(3), 1996, pp. 279-282
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
30
Issue
3
Year of publication
1996
Pages
279 - 282
Database
ISI
SICI code
1063-7826(1996)30:3<279:EOGOTP>2.0.ZU;2-1
Abstract
The dose dependence of the intensity of photoluminescence and infrared absorption in porous silicon with gamma irradiation under different c onditions was investigated. The nonmonotonic dose dependence of the in tensity of photoluminescence of porous silicon is explained in terms o f the oxidation of silicon. (C) 1996 American Institute of Physics.