A method based on the weak-binding approximation is proposed for calcu
lating the energy spectrum and the carrier wave functions in semicondu
ctor heterostructures. It is shown that this method can be effectively
used for a wide range of heterostructures in the absence and in the p
resence of the external magnetic field oriented along the axis of the
heterostructure. The structural features of the hole spectrum in super
lattices consisting of a very thin layer of one semiconductor and a th
ick layer of another semiconductor are studied. It is shown that in su
ch superlattices the hole wave function is a superposition of several
bulk states of light and heavy holes in which their mixing at the hete
rojunction is taken into account. The hole spectrum of the superlattic
es, which consist of asymmetric triangular wells, is calculated and an
alyzed. (C) 1996 American Institute of Physics.