INAS GAAS QUANTUM DOTS OBTAINED BY SUBMONOLAYER MIGRATION-ENHANCED EPITAXY (VOL 29, PG 884, 1995)/

Authors
TSYRLIN GE GOLUBOK AO TIPISEV SY LEDENTSOV NN GURYANOV GM
Citation
Ge. Tsyrlin et al., INAS GAAS QUANTUM DOTS OBTAINED BY SUBMONOLAYER MIGRATION-ENHANCED EPITAXY (VOL 29, PG 884, 1995)/, Semiconductors, 30(3), 1996, pp. 314-314
Citations number
1
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
30
Issue
3
Year of publication
1996
Pages
314 - 314
Database
ISI
SICI code
1063-7826(1996)30:3<314:IGQDOB>2.0.ZU;2-2