DESIGN OF SOI CMOS OPERATIONAL-AMPLIFIERS FOR APPLICATIONS UP TO 300-DEGREES-C

Design guidelines using two analog parameters (Early voltage and trans conductance to drain current ratio) are proposed for correct operation of silicon-on-insulator (SOI) CMOS operational amplifiers (opamp) at elevated temperature up to 300 degrees, The dependence of these parame ters on temperature is first described, A new single-stage CMOS opamp model using only these two parameters is presented and compared to mea surements of several implementations operating up to 300 degrees C for applications such as micropower (below 4 mu W at 1.2 V supply voltage ), high gain (65 dB) or high frequency up to 100 MHz, Trade-offs among such factors as gain, bandwidth, phase margin, signal swing, noise, m atching, slew rate and power consumption are described, The extension to other architectures is suggested and the design methodology is vali d for bulk as well as SOI CMOS opamps.