A 2.4-GHZ SILICON BIPOLAR OSCILLATOR WITH INTEGRATED RESONATOR

Authors
SOYUER M JENKINS KA BURGHARTZ JN AINSPAN HA CANORA FJ PONNAPALLI S EWEN JF PENCE WE
Citation
M. Soyuer et al., A 2.4-GHZ SILICON BIPOLAR OSCILLATOR WITH INTEGRATED RESONATOR, IEEE journal of solid-state circuits, 31(2), 1996, pp. 268-270
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE journal of solid-state circuits → ACNP
ISSN journal
00189200
Volume
31
Issue
2
Year of publication
1996
Pages
268 - 270
Database
ISI
SICI code
0018-9200(1996)31:2<268:A2SBOW>2.0.ZU;2-F
Abstract
A 2.4-GHz fully-monolithic silicon-bipolar oscillator circuit implemen ted in a 12-GHz BICMOS technology is presented. The integrated resonat or circuit uses three different versions of a 2-nH multilevel inductor and a wideband capacitive transformer, The measured Q factor is 9.3 f or the three-level inductor, An oscillator phase noise of -78 dBc/Hz i s achieved at 20-kHz offset. The circuit dissipates 50 mW from a 3.6-V supply.