FERROMAGNETIC TAU-MNAL EPITAXIALLY GROWN ON (100)GAAS SUBSTRATES BY PULSED-LASER DEPOSITION

Citation
Tm. Rosier et al., FERROMAGNETIC TAU-MNAL EPITAXIALLY GROWN ON (100)GAAS SUBSTRATES BY PULSED-LASER DEPOSITION, Materials letters, 26(4-5), 1996, pp. 227-231
Citations number
12
Categorie Soggetti
Material Science","Physics, Applied
Journal title
ISSN journal
0167577X
Volume
26
Issue
4-5
Year of publication
1996
Pages
227 - 231
Database
ISI
SICI code
0167-577X(1996)26:4-5<227:FTEGO(>2.0.ZU;2-J
Abstract
Epitaxial thin films of tau-MnAl have been grown on (100) GaAs substra tes by pulsed laser deposition. Transmission electron microscopy and m agnetotransport measurements have been used to determine the microstru cture and magnetic properties of the films. High resolution transmissi on electron microscopy shows that the deposited MnAl films have the la ttice constants of the tau-phase with a(0) = 0.264 nm and c(0) = 0.357 nm. Magnetoresistance measurements yield hysteresis curves verifying the perpendicular magnetization of the films and their coercivities of up to 6.7 kOe.