EPITAXIAL-GROWTH OF ER3-DOPED CAF2 BY MOLECULAR-BEAM EPITAXY()

Monocrystalline Er3+-doped CaF2 layers are grown on CaF2 substrates by molecular beam epitaxy (MBE) with Er3+ concentration up to 31.2 wt%. The lattice parameter and the crystallinity of the epilayers are inves tigated by X-ray diffraction analysis, electron probe microanalysis, a nd scanning electron microscopy. Green light emission at 538 nm is gen erated by upconversion for the first time: using a 798 nm laser diode pump. Maximum emission intensity at this wavelength is obtained at an Er3+ concentration of 13.3 wt%.