ETCHING AND SURFACE MODIFICATION OF GAAS BY HYDROGEN RADICALS GENERATED BY HYDROGEN MICROWAVE AFTERGLOW METHOD

Authors
NAGAYOSHI H YAMAMOTO Y KAMISAKO K
Citation
H. Nagayoshi et al., ETCHING AND SURFACE MODIFICATION OF GAAS BY HYDROGEN RADICALS GENERATED BY HYDROGEN MICROWAVE AFTERGLOW METHOD, JPN J A P 2, 35(4A), 1996, pp. 451-454
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
35
Issue
4A
Year of publication
1996
Pages
451 - 454
Database
ISI
SICI code
Abstract
We etched crystalline GaAs using hydrogen radicals generated by the hy drogen microwave afterglow method and determined the dependence of etc hing rate on substrate temperature, microwave power, and sample distan ce from the quartz tube supplying hydrogen radicals. From the Arrheniu s plot, the activation energy was found to be 0.43 eV. The surface mor phology could be varied from flat to textured by changing the etching conditions.