INTERMETAL DIELECTRIC GAP FILL BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED FLUORINE-DOPED SILICON DIOXIDE FILMS

Fluorine-doped tetra-ethoxy-ortho-silicate (F-TEOS) sill con dioxide f ilms were deposited using a dual frequency multi-station sequential pl asma enhanced chemical vapor deposition (PECVD) system. F-TEOS films w ith various Si-F content were deposited using mixture of vaporized TEO S, O-2 and C2F6. The Si-F content and gap filling capability of F-TEOS films was investigated under various deposition conditions. The gap f illing capability was found to be dependent upon wafer temperature, pr essure and gas phase reactant concentrations, but is predominantly dep endent on Si-F content. Aspect ratios (AR: height of metal lines versu s spacing between metal lines) up to 1.35:1 with 0.25 mu m spacing wer e filled with no observable seams and voids.