FEMTOSECOND REFLECTIONS OF BULK GAAS AND GAAS ALGAAS MULTIPLE-QUANTUMWELLS/

Authors
LI WL QIU ZR PENG WJ HUANG XG ZHOU JY YU ZX
Citation
Wl. Li et al., FEMTOSECOND REFLECTIONS OF BULK GAAS AND GAAS ALGAAS MULTIPLE-QUANTUMWELLS/, Chinese Physics Letters, 13(3), 1996, pp. 237-240
Citations number
6
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
13
Issue
3
Year of publication
1996
Pages
237 - 240
Database
ISI
SICI code
0256-307X(1996)13:3<237:FROBGA>2.0.ZU;2-P
Abstract
We present room temperature femtosecond reflection studies on the phot ocarrier dynamics of GaAs and GaAs/AlGaAs multiple quantum wells (MQW) . A rising wing with a time constant of about 5 ps and an increased am plitude per carrier is observed for the MQW sample at carrier densitie s lower than 5 x 10(11) cm(-2). This phenomenon is explained as the sa turation of the excitonic transitions.