SIMPLE METHOD FOR EXAMINING SULFUR PASSIVATION OF FACETS IN INGAAS-ALGAAS (LAMBDA=0.98 MU-M) LASER-DIODES

Authors
BEISTER G MAEGE J GUTSCHE D ERBERT G SEBASTIAN J VOGEL K WEYERS M WURFL J DAGA OP
Citation
G. Beister et al., SIMPLE METHOD FOR EXAMINING SULFUR PASSIVATION OF FACETS IN INGAAS-ALGAAS (LAMBDA=0.98 MU-M) LASER-DIODES, Applied physics letters, 68(18), 1996, pp. 2467-2468
Citations number
4
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
18
Year of publication
1996
Pages
2467 - 2468
Database
ISI
SICI code
0003-6951(1996)68:18<2467:SMFESP>2.0.ZU;2-N
Abstract
The effect of (NH4)(2)S-x treatment of the facet of InGaAs/AIGaAs ridg e waveguide (RW) laser diodes on the nonradiative current and catastro phic optical damage (GOD) level is reported. Using the power-voltage-c urrent (P-V-I) characteristics of the electroluminescence at low injec tion levels, changes in the density of surface states at the laser fac ets are described. (C) 1996 American Institute of Physics.