DYNAMICS OF BARRIER STATE ELECTRON SELF-LOCALIZATION IN INGAAS INGAASP MULTIPLE-QUANTUM-WELL LASERS/

We report details of lasing transitions based on self-localized barrie r state electrons in InGaAs/InGaAsP multiple quantum well lasers. We s tudy the mechanisms responsible for the switching between conventional lasing transitions at 1460 nm and a self-induced transition at 1360 n m. Carrier effects and current heating contribute both on a time scale of a few ns with the current heating dominating. Carrier effects are separable from the thermal effects when 100 ps wide electrical drive p ulses are used. (C) 1996 American Institute of Physics.