We present the results of a study of the subpicosecond dynamic behavio
r of optically induced absorption changes in low-temperature-grown GaA
s. We show that the observed behavior is dominated by mid-gap trap sta
tes, and can be accurately modeled by the rate equations previously de
veloped to describe quasi-cw results. Our data give the first approxim
ate values for trap emptying times in this material. (C) 1996 American
Institute of Physics.