Sh. Yun et al., GROWTH OF HGBA2CA2CU3O8-FILMS ON LAALO3 SUBSTRATES USING FAST TEMPERATURE RAMPING HG-VAPOR ANNEALING(DELTA THIN), Applied physics letters, 68(18), 1996, pp. 2565-2567
The fast temperature ramping Hg-vapor annealing (FTRA) process has bee
n used for growth of superconducting Hg-based cuprate thin films on (1
00) LaAlO3 substrates. The film/substrate interface chemical reactions
and the formation of a CaHgO2 impurity phase have been effectively re
duced with adoption of the FTRA process. A zero-resistance superconduc
ting transition temperature of 128 K and critical current densities of
up to 1.4 x 10(6) A/cm(2) at 77 K and 2.5 x 10(5) A/cm(2) at 110 K an
d zero field have been obtained. (C) 1996 American Institute of Physic
s.