GROWTH OF HGBA2CA2CU3O8-FILMS ON LAALO3 SUBSTRATES USING FAST TEMPERATURE RAMPING HG-VAPOR ANNEALING(DELTA THIN)

Authors
YUN SH WU JZ TIDROW SC ECKART DW
Citation
Sh. Yun et al., GROWTH OF HGBA2CA2CU3O8-FILMS ON LAALO3 SUBSTRATES USING FAST TEMPERATURE RAMPING HG-VAPOR ANNEALING(DELTA THIN), Applied physics letters, 68(18), 1996, pp. 2565-2567
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
18
Year of publication
1996
Pages
2565 - 2567
Database
ISI
SICI code
0003-6951(1996)68:18<2565:GOHOLS>2.0.ZU;2-X
Abstract
The fast temperature ramping Hg-vapor annealing (FTRA) process has bee n used for growth of superconducting Hg-based cuprate thin films on (1 00) LaAlO3 substrates. The film/substrate interface chemical reactions and the formation of a CaHgO2 impurity phase have been effectively re duced with adoption of the FTRA process. A zero-resistance superconduc ting transition temperature of 128 K and critical current densities of up to 1.4 x 10(6) A/cm(2) at 77 K and 2.5 x 10(5) A/cm(2) at 110 K an d zero field have been obtained. (C) 1996 American Institute of Physic s.