COIMPLANTATION OF SILVER AND HALOGENS IN THIN SIO2-FILMS

Silver and halogens, Br and Cl, were coimplanted into thin SiO2 films sandwiched on a field-effect structure. Compositional depth distributi on and chemical states of the implants were measured by means of Auger electron spectroscopy and x-ray photoelectron spectroscopy. Ion sensi tivity of the surface layer was measured using a capacitive field-effe ct structure, electrolyte-insulator-semiconductor. Silver halides were found to be incorporated in SiO2 in addition to metallic silver. The distribution of the implanted silver sensitively responds to the react ive halogens subsequently implanted into a silver-containing surface. The solid phase of silver halides with a concentration of less than 10 at. % delivers a distinct ion sensing characteristic toward halide io ns in an electrolyte solution, comparable to that of bulk material. (C ) 1996 American Institute of Physics.