POSTGROWTH ANNEALING EFFECTS OF TIO2 THIN-FILMS GROWN ON INP SUBSTRATE AT LOW-TEMPERATURE BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

The structural and electrical properties of titanium dioxide (TiO2) th in films grown on n-type InP(100) substrate by low-pressure metal-orga nic chemical-vapor deposition have been studied with postannealing. Th e thin films of TiO2 were deposited at a low temperature of 350 degree s C using titanium isopropoxide and oxygen. After a postgrowth anneali ng by the rapid thermal annealing method at a temperature of 850 degre es C for 15 s, the TiO2/InP structure of only the anatase phase with ( 101) and (200) peaks was observed by x-ray diffraction analysis. No in terface reaction between TiO2 and InP was detected by Auger electron s pectroscopy depth profiling. From capacitance-voltage measurement of t he Al/TiO2/n-InP structure, the interface density of states at midgap energy and the dielectric constant were approximately low 10(12) eV(-1 ) cm(-2) at midgap energy and about 50, respectively. (C) 1996 America n Institute of Physics.