Gr. Srinivasan, MODELING THE COSMIC-RAY INDUCED SOFT-ERROR RATE IN INTEGRATED-CIRCUITS - AN OVERVIEW, IBM journal of research and development, 40(1), 1996, pp. 77-89
This paper is an overview of the concepts and methodologies used to pr
edict soft-error rates (SER) due to cosmic and high-energy particle ra
diation in integrated circuit chips. The paper emphasizes the need for
the SER simulation using the actual chip circuit model which includes
device, process, and technology parameters as opposed to using either
the discrete device simulation or generic circuit simulation that is
commonly employed in SER modeling. Concepts such as funneling, event-b
y-event simulation, nuclear history files, critical charge, and charge
sharing are examined. Also discussed are the relative importance of e
lastic and inelastic nuclear collisions, rare event statistics, and de
vice vs. circuit simulations. The semi-empirical methodologies used in
the aerospace community to arrive at SERs [also referred to as single
-event upset (SEU) rates] in integrated circuit chips are reviewed. Th
is paper is one of four in this special issue relating to SER modeling
. Together, they provide a comprehensive account of this modeling effo
rt, which has resulted in a unique modeling tool called the Soft-Error
Monte Carlo Model, or SEMM.