MODELING THE COSMIC-RAY INDUCED SOFT-ERROR RATE IN INTEGRATED-CIRCUITS - AN OVERVIEW

This paper is an overview of the concepts and methodologies used to pr edict soft-error rates (SER) due to cosmic and high-energy particle ra diation in integrated circuit chips. The paper emphasizes the need for the SER simulation using the actual chip circuit model which includes device, process, and technology parameters as opposed to using either the discrete device simulation or generic circuit simulation that is commonly employed in SER modeling. Concepts such as funneling, event-b y-event simulation, nuclear history files, critical charge, and charge sharing are examined. Also discussed are the relative importance of e lastic and inelastic nuclear collisions, rare event statistics, and de vice vs. circuit simulations. The semi-empirical methodologies used in the aerospace community to arrive at SERs [also referred to as single -event upset (SEU) rates] in integrated circuit chips are reviewed. Th is paper is one of four in this special issue relating to SER modeling . Together, they provide a comprehensive account of this modeling effo rt, which has resulted in a unique modeling tool called the Soft-Error Monte Carlo Model, or SEMM.