ELECTRON-AFFINITIES OF SI, GE, SN AND PT BY TUNABLE LASER PHOTODETACHMENT STUDIES

Citation
J. Thogersen et al., ELECTRON-AFFINITIES OF SI, GE, SN AND PT BY TUNABLE LASER PHOTODETACHMENT STUDIES, Journal of physics. B, Atomic molecular and optical physics, 29(7), 1996, pp. 1323-1330
Citations number
15
Categorie Soggetti
Physics, Atomic, Molecular & Chemical",Optics
ISSN journal
09534075
Volume
29
Issue
7
Year of publication
1996
Pages
1323 - 1330
Database
ISI
SICI code
0953-4075(1996)29:7<1323:EOSGSA>2.0.ZU;2-D
Abstract
The electron affinities of silicon, germanium, tin and platinum are me asured by tunable laser photodetachment spectroscopy via detection of the neutral atomic species. The binding energy values obtained for Si- , Ge- and Sn- (electron configuration np(3) with n = 3 to 5) are 11207 .0(5) cm(-1), 9942.6(4) cm(-1) and 8969.6(5) cm(-1), respectively. The improvements in accuracy over the existing values in the literature f or these three species lie between one and two orders of magnitude. Th e binding energy of the 5d(9)6s(2) D-2(5/2) ground level of Pt- is fou nd to be 17141(6) cm(-1). This result is in relatively good agreement with the two existing results in the literature. Finally, the prospect s for further studies of atomic negative ions are briefly discussed.