ROOM TEMPERATURE EMISSION IN NARROW (14NM) CD0.35ZN0.65SE ZNSE QUANTUM WIRES WITH STRONG LATERAL CONFINEMENT EFFECTS/

We have fabricated deep etched Cd0.35Zn0.65Se/ZnSe quantum wires with lateral extensions down to 14 nm. The wires were defined by electron b eam lithography and a low damage wet chemical etch process. Time-integ rated and time-resolved photoluminescence spectroscopy was used to stu dy excitonic properties in ultranarrow wide bandgap quantum wires, Lat eral quantization causes a blue shift of the photoluminescence emissio n of up to 17 meV with respect to the 2D reference. A low temperature (T = 2 K) lifetime of about 110 ps was found, almost independent of th e wire width, At room temperature, non-radiative sidewall recombinatio n reduces the exciton lifetime from 330 ps for the 2D reference to abo ut 21 ps in the case of a 28 nm wide wire.