M. Certier et al., PHOTOLUMINESCENCE OF P-CDTE - CHARACTERIZATION OF IMPURITY CENTERS BYPHONON SIDE-BAND, Journal of crystal growth, 159(1-4), 1996, pp. 879-882
A detailed characterization of the impurity centers involved in the ph
otoluminescence (PL) of doped and undoped CdTe has been performed. Spe
cial attention has been devoted to the temperature dependence of the b
and between 1.54 and 1.55 eV observed in As and Sb doped samples, The
longitudinal optical (LO) phonon replicas are characterized by a Huang
-Rhys factor S. The various electron-hole recombination processes are
explained by means of a simple analytic model correlating the position
of the zero-phonon lines to the relative intensities of the phonon si
de-bands. The model accounts for the chemical shift of the defect cent
ers and describes the effect of the charge carrier LO-phonon interacti
on in the framework of the adiabatic approximation within the envelope
function approach.