A 1.3 V SUPPLY VOLTAGE ALGAAS INGAAS HJFET SCFL D-FF OPERATING AT UP TO 10 GBPS/

Citation
M. Fujii et al., A 1.3 V SUPPLY VOLTAGE ALGAAS INGAAS HJFET SCFL D-FF OPERATING AT UP TO 10 GBPS/, IEICE transactions on electronics, E79C(4), 1996, pp. 512-517
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
09168524
Volume
E79C
Issue
4
Year of publication
1996
Pages
512 - 517
Database
ISI
SICI code
0916-8524(1996)E79C:4<512:A1VSVA>2.0.ZU;2-4
Abstract
A high speed and low power consumption SCFL circuit design with low su pply voltage is proposed. Focusing on the relationship between logic s wing and supply voltage, the lower limit for the supply voltage is pre sented. Theoretical analysis and circuit simulation indicates that the logic swing needs to be optimized to maintain high average g(m) withi n the swing. An SCFL D-FF fabricated using a 0.25 mu m n-AlGaAs/i-InGa As HJFET process operates at up to 10 Gbps with power consumption as l ow as 19 mW at a supply voltage of 1.3 V.