A 40GHZ F(T) SATURN TRANSISTOR USING 2-STEP EPITAXIAL BASE TECHNOLOGY

We have developed the Epi-Base SATURN process as a silicon bipolar pro cess technology which can be applied to optical transmission LSIs. Thi s process technology, to which low temperature selective epitaxial gro wth technology is applied, is based on the SATURN process. By performi ng selective epitaxial growth for base formation in 2 steps, transisto rs with a 40 GHz maximum cut-off frequency have been fabricated. In ci rcuit simulation based on SPICE parameters of transistors, the target performance required for 2.4 Gbit/s optical interface LSIs has been ac hieved.