ANALYTIC INVESTIGATION OF FREQUENCY SENSITIVITY IN MICROWAVE-OSCILLATORS - APPLICATION TO THE COMPUTATION OF PHASE NOISE IN A DIELECTRIC RESONATOR OSCILLATOR

The conversion of low frequency noise into phase noise in microwave os cillators is studied through an analytical calculation of the pushing factor. This calculation is based on a simplified equivalent circuit f or two types of active active devices. field effect transistors (FET) and heterojunction bipolar transistors (HBT). The pre-eminence in the conversion process of the gate-source capacitance in the FET and the b ase-emitter junction in the HBT is pointed out. Practical methods are proposed to reduce the phase noise in these circuits.