RESISTIVITY AND L(III)-EDGE ABSORPTION STUDIES IN VALENCE FLUCTUATIONSYSTEM CE2NI3SI5

From our x-ray (L(III)-edge) absorption (XAS) investigations of Ce2Ni3 Si5, we show that Ce-valence is temperature dependent; it is 3.07 and 3.11 at 280 and 8 K, respectively. We also report on our resistivity m easurements of two related materials Ce(2-x)R(x)Ni(3)Si(5) (R=Y, Gd an d x=0.1). Absence of any qualitative difference in the resistivities o f these two samples suggests that the enhancement of resistivity at lo w temperature on introduction of impurity atoms is due to Kondo hole s cattering implying that Ce2Ni3Si5 is a concentrated Kondo system. (C) 1996 American Institute of Physics.