Rp. Pinto et al., TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-RESISTIVITY AND THERMOPOWER OF U2NI2IN AND ND2NI2SN, Journal of applied physics, 79(8), 1996, pp. 6355-6357
Accurate measurements of the electrical resistivity (p,dp/dT) and of t
he thermoelectric power (S,dS/dT) were performed in the ternary compou
nds U2Ni2In and Nd2Ni2Sn from 4 K to 250 K, and the results are compar
ed with those previously obtained in U2Ni2Sn. The pair U2Ni2In/U2Ni2Sn
enables us to study the influence of the p-electron character (and ot
her band effects related to the elements In/Sn) on the transport prope
rties, whereas the pair Nd2Ni2Sn/U2Ni2Sn provides direct information o
n the role played by the 4f/5f electrons. All these compounds order in
itially in the antiferromagnetic state, exhibiting a characteristic mi
nimum in dp/dT at T-N. In the U2Ni2In compound a drastic reduction is
observed in p(T) slightly below T-N, suggesting the coexistence of the
antiferromagnetic state with a coherent Kondo effect when T less than
or equal to 0.8 T-N. In Nd2Ni2Sn we observe distinct phase transition
s below T-N, Of first-order character and likely associated with order
-order magnetic transitions. The anomalous behavior of p(T) in the par
amagnetic phase of the Nd2Ni2Sn compound can be satisfactorily describ
ed in terms of crystal field effects associated with the 4f-electron l
evels. (C) 1996 American Institute of Physics.