The magnetization reversal processes in the free and the pinned layers
of TbCo-biased spin valves have been studied in a highly modified tra
nsmission electron microscope. Reversal of the free layer in the prese
nce of a field antiparallel to the biasing direction proceeds by a com
plex domain process with 360 degrees walls forming frequently. In the
presence of substantially higher fields, the pinned layer reverses by
creep of highly irregular walls through the structure. By studying ima
ge grey levels, an estimate of the average orientation of the inductio
n vector in the TbCo layer is made. (C) 1996 American Institute of Phy
sics.