HALL-EFFECT CHARACTERIZATION IN SEMICONDUCTOR HETEROSTRUCTURE JUNCTIONS USING POLARIZED LASER SIGNAL

We describe a new technique which exploits the ac Hall effect in the c haracterization of layered semiconductor structures. The method employ s laser signals in the presence of a de magnetic bias field. Upon inci dence the polarization of the optical signal is rotated via a Lorentz force due to the ac Hall effect. As such, the reflected waves carry in formation on the Hall mobility of the charge carriers. The calculation s show that ac Hall reflection warrants sufficient intensity to be mea sured. Our theory is complete in the sense that depth profiling has be en explicitly incorporated in the formulation. (C) 1996 American Insti tute of Physics.