ANTIFERROMAGNETIC COUPLING IN MAGNETIC MULTILAYERS WITH A NARROW-GAP SEMICONDUCTOR SPACER

Authors
SHI ZP KLEIN BM
Citation
Zp. Shi et Bm. Klein, ANTIFERROMAGNETIC COUPLING IN MAGNETIC MULTILAYERS WITH A NARROW-GAP SEMICONDUCTOR SPACER, Journal of applied physics, 79(8), 1996, pp. 4776-4778
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
79
Issue
8
Year of publication
1996
Part
2A
Pages
4776 - 4778
Database
ISI
SICI code
0021-8979(1996)79:8<4776:ACIMMW>2.0.ZU;2-Y
Abstract
Antiferromagnetic (AF) coupling has been observed in sputtered Fe/Si m ultilayers at room temperature, with thin spacers (<20 Angstrom) which were claimed to be FeSi. To study the magnetic coupling in this syste m we extend the RKKY interaction approach to a temperature-dependent n arrow gap semiconductor. The strong AF coupling at room temperature an d weakly ferromagnetic (F) coupling at low temperatures observed in Fe /Si can be explained from this model. (C) 1996 American Institute of P hysics.