A. Morisako et al., SPUTTERED HEXAGONAL BA-FERRITE FILMS FOR HIGH-DENSITY MAGNETIC RECORDING MEDIA, Journal of applied physics, 79(8), 1996, pp. 4881-4883
Ba-ferrite (BaM) thin films were prepared by both a facing targets spu
ttering (FTS) system and dc magnetron sputtering (DCMS) at loom temper
ature. They were successively annealed to crystallize. The films prepa
red by FTS system were crystallized at 650 degrees C, while those prep
ared by DCMS system were crystallized at 700 degrees C. Saturation mag
netization, coercivity, and squareness ratio of the films prepared by
FTS are 210 emu/cc, 3.3 kOe, and 0.7 in perpendicular direction, respe
ctively, after the annealing at 650 degrees C. It was found that oxidi
zed Fe is partially reduced to metallic Fe by high-temperature anneali
ng. (C) 1996 American Institute of Physics.