CR-BACKSLASH(COPTCR,COPTX) LAYERED FILM STUDIES FOR HARD BIAS APPLICATIONS

Authors
TSOUKATOS A GUPTA S MARX D
Citation
A. Tsoukatos et al., CR-BACKSLASH(COPTCR,COPTX) LAYERED FILM STUDIES FOR HARD BIAS APPLICATIONS, Journal of applied physics, 79(8), 1996, pp. 5018-5020
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
79
Issue
8
Year of publication
1996
Part
2A
Pages
5018 - 5020
Database
ISI
SICI code
0021-8979(1996)79:8<5018:CLFSFH>2.0.ZU;2-P
Abstract
Cr\(CoPtCr,CoPt) films were deposited on oxidized Si (100) substrates via de magnetron sputtering. Process parameters, such as deposition ra tes, number of bilayers, and bias voltage, were varied to achieve the hard magnetic properties without thermal processing of the films. Coer civities in the range of 2000 Ok, with corresponding squareness of abo ut 0.8-0.9, and remanent magnetization in the gange (3-3.6) memu/cm(3) , were achieved by identification of the optimum conditions. (C) 1996 American Institute of Physics.