EXCHANGE BIASING IN MBE GROWN FE3O4 COO BILAYERS - THE ANTIFERROMAGNETIC LAYER THICKNESS DEPENDENCE/

Citation
Pj. Vanderzaag et al., EXCHANGE BIASING IN MBE GROWN FE3O4 COO BILAYERS - THE ANTIFERROMAGNETIC LAYER THICKNESS DEPENDENCE/, Journal of applied physics, 79(8), 1996, pp. 5103-5105
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
79
Issue
8
Year of publication
1996
Part
2A
Pages
5103 - 5105
Database
ISI
SICI code
0021-8979(1996)79:8<5103:EBIMGF>2.0.ZU;2-6
Abstract
Exchange biasing has been studied for a series of [100] and [111] orie nted, epitaxial Fe3O4/CoO bilayers grown by oxidic MBE. The low-temper ature exchange biasing versus CoO layer thickness is compared to theor etical models for exchange biasing. We argue that the Malozemoff rando m field model does not apply to this system. The exchange biasing calc ulated according to the Meiklejohn-Bean model, assuming nearest-neighb or exchange coupling across a flat and magnetically uncompensated inte rface, differs for [100] oriented bilayers by a factor of similar or e qual to 8 from the experimental value. (C) 1996 American Institute of Physics.