HALL-EFFECT AND GIANT MAGNETORESISTANCE IN LANTHANUM MANGANITE THIN-FILMS

Citation
Je. Nunezregueiro et al., HALL-EFFECT AND GIANT MAGNETORESISTANCE IN LANTHANUM MANGANITE THIN-FILMS, Journal of applied physics, 79(8), 1996, pp. 5179-5181
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
79
Issue
8
Year of publication
1996
Part
2A
Pages
5179 - 5181
Database
ISI
SICI code
0021-8979(1996)79:8<5179:HAGMIL>2.0.ZU;2-Z
Abstract
Magnetoresistance and Hall coefficient have been investigated as a fun ction of temperature in patterned thin films of La-Ca-Mn-O. Our data o n magnetoresistance show a maximum magnetoresistance ratio Delta rho/r ho(O) of approximate to-60% at 1.5 T and 240 K. The Hall coefficient i ndicates that the carriers are predominantly holes, with apparent dens ity that varies as a function of temperature. Although changes in mobi lity were also observed, our results indicate that changes in carrier density become more important than changes in mobility at temperatures lower than the Curie temperature. We interpret our data in terms of a simple picture that includes two parallel contributions to the carrie r density and the conductivity. (C) 1996 American Institute of Physics .