N. Matsushita et al., HIGHLY CRYSTALLIZED (LA,SR)MNO3 FILMS DEPOSITED BY FACING TARGETS SPUTTERING APPARATUS, Journal of applied physics, 79(8), 1996, pp. 5247-5249
La1-xSrxMnO3 films about 4000 Angstrom thick were deposited on thermal
ly oxidized Si wafers, and then their crystalline orientation and magn
etic characteristics were investigated. Orientation of (111) in which
large ions such as O2-, La3+, and Sr2+ are most closely packed became
preferential with increase of total gas pressure P-total and partial o
xygen pressure P-O2. Although spontaneous magnetization was not detect
ed, even the him deposited at substrate temperature T-s as low as 330
degrees C revealed obvious orientation of (110) in which metallic ions
are most closely packed. The film deposited at T-s of 500 degrees C,
P-total of 2.0, and P-O2 of 0.1 mTorr, and the film postannealed at 90
0 degrees C for 3 h in oxygen atmosphere possessed the saturation magn
etization 4 pi M(s) of 1.2 and 3.5 kG at 77 K and their Curie temperat
ures were 217 and 313 K, respectively. B-H curves at 77 K revealed tha
t the easy magnetization direction of these films was in-plane. (C) 19
96 American Institute of Physics.