ALPHA''-FE16N2 PHASE EPITAXIALLY GROWN BY SPUTTER BEAM METHOD
Citation
S. Okamoto et al., ALPHA''-FE16N2 PHASE EPITAXIALLY GROWN BY SPUTTER BEAM METHOD, Journal of applied physics, 79(8), 1996, pp. 5250-5252
Categorie Soggetti
Physics, Applied
SICI code
0021-8979(1996)79:8<5250:APEGBS>2.0.ZU;2-H
Abstract
Epitaxial Fe-N films have been grown on Fe or Ag(001) single-crystal u
nderlayers by the sputter beam method. The Fe-N films pn both underlay
ers have abet structure (alpha'-martensite), whose lattice is elongate
d along, the [001] direction by nitrogen atoms located in octahedral i
nterstices of alpha-Fe. These films possess well-defined crystal orien
tation and exhibit a higher saturation magnetization (4 pi M(s)) than
that of alpha-Fe for a certain range of various nitrogen content. Post
annealing promotes ordering of nitrogen atoms in the bct lattice, resu
lting in precipitation of a metastable alpha ''-Fe16N2 phase in Fe-N f
ilms. The 4 pi M(s) of the annealed samples tends to increase with the
increase of the alpha '' volume fraction, and the Fe-N film with 4 pi
M(s) of about 25 kG contains 26-33 vol% alpha '' phase. While both Fe
and Ag underlayers can promote epitaxial growth of the Fe-N films, ve
ry fast ordering of nitrogen atoms and easily decomposed alpha ''-Fe16
N2 have been observed in the sample on a Ag underlayer. This fact lead
s to the fact that the ordering rate and the stability of alpha ''-Fe1
6N2 are very sensitive to its crystal quality. (C) 1996 American Insti
tute of Physics.