EPITAXIAL FE16N2 FILMS GROWN ON SI(001) BY REACTIVE SPUTTERING

Citation
Ma. Brewer et al., EPITAXIAL FE16N2 FILMS GROWN ON SI(001) BY REACTIVE SPUTTERING, Journal of applied physics, 79(8), 1996, pp. 5321-5323
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
79
Issue
8
Year of publication
1996
Part
2A
Pages
5321 - 5323
Database
ISI
SICI code
0021-8979(1996)79:8<5321:EFFGOS>2.0.ZU;2-#
Abstract
We present a crystallographic template for the growth of the range of Fe-N phases on Si(001) by lattice matching on selected underlayers. Ep itaxial films of pure alpha-Fe, gamma'-Fe4N, and alpha'-Fe8N (N marten site) were grown individually by the optimization of reactive Nz Sputt ering parameters. The orientation relation of the Fe-N phases was FeN( 001)\\Ag(001)\\Si(001) and Fe-N[100]\\Ag[110]\\Si[100]. Annealing the alpha'-Fe8N films resulted in the formation of alpha'-Fe8N/alpha ''-Fe 16N2 mixtures. In addition to the crystallographic and structural anal ysis, quantification of x-ray diffraction peak intensities confirmed t hat the alpha'/alpha '' mixtures contained as much as 46 vol % alpha ' ' (remaining alpha'). Vibrating sample magnetometry and SQUID magnetom etry measurements of the alpha' and alpha'(54%)/alpha ''(46%) mixture, respectively, indicate enhanced magnetic moments for both the alpha' and alpha '' phases with respect to pure Fe. (C) 1996 American Institu te of Physics.