SOFT-X-RAY PHOTOEMISSION-STUDY OF MN GAP(100) INTERFACE/

Authors
XU SH XU PS LU ED YU XJ ZHANG XY YANG FY
Citation
Sh. Xu et al., SOFT-X-RAY PHOTOEMISSION-STUDY OF MN GAP(100) INTERFACE/, Acta physica Sinica, 5(3), 1996, pp. 207-212
Citations number
9
Categorie Soggetti
Physics
Journal title
Acta physica Sinica → ACNP
ISSN journal
10003290
Volume
5
Issue
3
Year of publication
1996
Pages
207 - 212
Database
ISI
SICI code
1000-3290(1996)5:3<207:SPOMGI>2.0.ZU;2-U
Abstract
The interface formation and electronic structures of the Mn/GaP(100) i nterface are studied with synchrotron radiation photoemission. At the early stage of Mn deposition, Mn covers the whole GaP(100) surface. Wi th the increase of coverage, Ga atoms can be exchanged by Mn atoms and diffuse into the Mn overlayer. However, P atoms remain always near th e interfacial region. A significant difference of the electronic struc tures is observed between the ultra-thin and the thick Mn films. The e xplanations for this are given in the text.