THE CONCEPT OF QUASI-DISCRETE LEVELS FOR ION-IMPLANTED WAVE-GUIDES

Authors
POGOSSIAN SP ARUTUNIAN EA GALOYAN SK
Citation
Sp. Pogossian et al., THE CONCEPT OF QUASI-DISCRETE LEVELS FOR ION-IMPLANTED WAVE-GUIDES, Applied physics. A, Solids and surfaces, 56(5), 1993, pp. 449-451
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics. A, Solids and surfaces → ACNP
ISSN journal
07217250
Volume
56
Issue
5
Year of publication
1993
Pages
449 - 451
Database
ISI
SICI code
0721-7250(1993)56:5<449:TCOQLF>2.0.ZU;2-4
Abstract
In this paper, we introduce the concept of quasi-stationary states for ion-implanted waveguides. It can be employed for a certain range of i mplanted barrier parameters. It is shown that for a rather large thick ness of the barrier, the waveguide modes can be regarded as quasi-disc rete lines with some widths. In order to estimate these widths the ref ractive index profile has been modelled by a four-layer step index fun ction.