RAPIDLY ANNEALED BI(PB)SRCACUO THIN-FILMS PREPARED BY A 2223-STOICHIOMETRIC TARGET SPUTTERING

Thin films of BiSrCaCuO were prepared on MgO (100) by a single target sputtering. This deposition process yielded c-axis oriented supercondu cting thin films with a smooth surface. The as-grown films grown at 67 0-690 degrees C showed 2223 single phase and zero resistivity at about 60 Ii. The as-grown films were directly placed on a Bi(Pb)SrCaCuO bul l; sample, and then rapidly annealed at 835-845 degrees C within 40 s in air. The superconducting properties of the annealed Bi(Pb)SrCaCuO f ilms were greatly improved by optimizing the temperature and time duri ng rapid annealing. Films annealed at 840 degrees C for 30 s in air sh owed zero resistivity at 100 K and had the critital current of about 1 x 10(6) A/cm(2) at 77 K. The surfaces of these films on MgO were blac k and smooth. The film quality is greatly improved by means of anneali ng process at 840 degrees C for a very short time of 30 s in air after deposition.