LOW-VOLTAGE TRANSIENT BIPOLAR EFFECT INDUCED BY DYNAMIC FLOATING-BODYCHARGING IN SCALED PD SOI MOSFETS/

An increased significance of the parasitic bipolar transistor (BJT) in scaled floating-body partially depleted SOI MOSFET's under transient conditions is described, The transient parasitic BJT effect is analyze d using both simulations and highspeed pulse measurements of pass tran sistors in a sub-0.25 mu m SOI technology, The transient BJT current c an be significant even at low drain-source voltages, well below the de vice breakdown voltage, and does not scale with technology, Our analys is shows that it can be problematic in digital circuit operation, poss ibly causing write disturbs in SRAM's and decreased retention times fo r DRAM's, Proper device/circuit design, suggested by our analysis, can however control the problems.