A NOVEL VERTICAL BOTTOM-GATE POLYSILICON THIN-FILM-TRANSISTOR WITH SELF-ALIGNED OFFSET

A novel device structure for the vertical bottom polysilicon gate thin film transistor (TFT) with a self-align offset drain is proposed and demonstrated, The new VTFT allows a deep-submicron channel length, whi ch is determined by the thickness of the active polysilicon film, not by the lithographic system resolution, The self-alignment offset drain reduces the leakage current, as a result, it exhibits good device per formance.