We have studied the electronic structures of GdX (X: P, As, Sb, Bi) by
means of the X-ray photoemission, X-ray bremsstrahlung isochromat and
vacuum ultraviolet inverse photoemission spectroscopy. We have found
monotonous energy shifts of the Gd 3d, 4d and 4f levels from GdP to Gd
Bi. Such systematic energy shifts are attributed to the reduced crysta
l field splitting of the Gd 5d state through GdX. The occupied valence
band is dominated by the X p state. The energy shifts of the valence
band are found to be much different from those of the Gd-derived state
s, but consistently interpreted by the band calculation.