Sn. Rashkeev et G. Wendin, ELECTRONIC RAMAN CONTINUUM FOR YBA2CU3O7-DELTA - EFFECTS OF INELASTIC-SCATTERING AND INTERBAND-TRANSITIONS, Physical review. B, Condensed matter, 47(17), 1993, pp. 11603-11606
The electronic Raman continuum in YBa2Cu3O7 is calculated in a model w
hich takes into account strong inelastic scattering and interband tran
sitions. The ab-plane polarized continuum contains a large contributio
n from interband processes and does not depend strongly on temperature
and the inelastic scattering strength. The in-plane anisotropy is det
ermined by the interband transitions rather than by the anisotropy of
the Fermi surface. The ZZ continuum can be crudely described within a
single-band model with inelastic scattering and is very dependent on t
he relaxation rates of inelastic scattering. The nature of the oxygen-
deficiency dependence of the Raman spectra is also commented upon.