ELECTRONIC RAMAN CONTINUUM FOR YBA2CU3O7-DELTA - EFFECTS OF INELASTIC-SCATTERING AND INTERBAND-TRANSITIONS

Citation
Sn. Rashkeev et G. Wendin, ELECTRONIC RAMAN CONTINUUM FOR YBA2CU3O7-DELTA - EFFECTS OF INELASTIC-SCATTERING AND INTERBAND-TRANSITIONS, Physical review. B, Condensed matter, 47(17), 1993, pp. 11603-11606
Citations number
26
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
47
Issue
17
Year of publication
1993
Pages
11603 - 11606
Database
ISI
SICI code
0163-1829(1993)47:17<11603:ERCFY->2.0.ZU;2-C
Abstract
The electronic Raman continuum in YBa2Cu3O7 is calculated in a model w hich takes into account strong inelastic scattering and interband tran sitions. The ab-plane polarized continuum contains a large contributio n from interband processes and does not depend strongly on temperature and the inelastic scattering strength. The in-plane anisotropy is det ermined by the interband transitions rather than by the anisotropy of the Fermi surface. The ZZ continuum can be crudely described within a single-band model with inelastic scattering and is very dependent on t he relaxation rates of inelastic scattering. The nature of the oxygen- deficiency dependence of the Raman spectra is also commented upon.