ELECTRICAL CHARACTERIZATION OF C-60 EVAPORATED-FILMS USING MOS STRUCTURE

Authors
KUDO K SARAYA T KUNIYOSHI S TANAKA K
Citation
K. Kudo et al., ELECTRICAL CHARACTERIZATION OF C-60 EVAPORATED-FILMS USING MOS STRUCTURE, Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals, 267, 1995, pp. 423-428
Citations number
10
Categorie Soggetti
Crystallography
Journal title
Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals → ACNP
ISSN journal
1058725X
Volume
267
Year of publication
1995
Pages
423 - 428
Database
ISI
SICI code
1058-725X(1995)267:<423:ECOCEU>2.0.ZU;2-K
Abstract
Field effect and capacitance-voltage characteristics of vacuum evapora ted C-60 films are studied using metal-oxide-semiconductor structures such as metal/C-60/SiO2/n(+)-Si or or C-60/source-drain electrodes/SiO 2/n(+)-Si. The electrical conductivity, carrier type, carrier concentr ation, and carrier mobility are estimated from these measurements. In particular, electrical characteristics during the deposition in vacuum and the influence of oxygen and nitrogen gases are investigated by th e in-situ field effect measurement.