SPECIAL-LINES APPROXIMATION TO BRILLOUIN-ZONE INTEGRATION

Authors
Citation
P. Enders, SPECIAL-LINES APPROXIMATION TO BRILLOUIN-ZONE INTEGRATION, Semiconductor science and technology, 11(2), 1996, pp. 187-189
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
11
Issue
2
Year of publication
1996
Pages
187 - 189
Database
ISI
SICI code
0268-1242(1996)11:2<187:SATBI>2.0.ZU;2-G
Abstract
For the sake of saving memory and cpu time, in particular, for device modelling, a new approximation to integrals over the Brillouin zone is proposed, where the 3D integral is replaced with a sum of 1D integral s along characteristic directions (e.g. symmetry lines) of the crystal lattice. In contrast to parabolic-isotropic approximations, this meth od takes into account the full non-parabolicity and approximates the w arping of real bands. As a test, numerical results are given for the h eavy- and light-hole density as function of Fermi energy in InGaAsP.