CHARACTERIZATION OF DELTA-DOPED SUPERLATTICES BY SHUBNIKOV-DE HAAS MEASUREMENTS

Authors
HENRIQUES AB GONCALVES LCD DESOUZA PL YAVICH B
Citation
Ab. Henriques et al., CHARACTERIZATION OF DELTA-DOPED SUPERLATTICES BY SHUBNIKOV-DE HAAS MEASUREMENTS, Semiconductor science and technology, 11(2), 1996, pp. 190-195
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
2
Year of publication
1996
Pages
190 - 195
Database
ISI
SICI code
0268-1242(1996)11:2<190:CODSBS>2.0.ZU;2-F
Abstract
The Shubnikov-de Haas oscillations of InP with a periodical planar dop ing with Si were studied at 4.2 K in fields of 0-14 T. By confronting the oscillation frequencies detected experimentally with the ones pred icted on the basis of the effective-mast; approximation the carrier po pulation of the superlattice minibands and the characteristic width of the doped layer were obtained. The width of the doped layer obtained in this way is in good agreement with the value obtained from C-V prof iling measurements on the same structures.