EFFECT OF OXYGEN CONCENTRATION IN THE SPUTTERING AMBIENT ON THE MICROSTRUCTURE, ELECTRICAL AND OPTICAL-PROPERTIES OF RADIOFREQUENCY MAGNETRON-SPUTTERED INDIUM TIN OXIDE-FILMS

Authors
WU WF CHIOU BS
Citation
Wf. Wu et Bs. Chiou, EFFECT OF OXYGEN CONCENTRATION IN THE SPUTTERING AMBIENT ON THE MICROSTRUCTURE, ELECTRICAL AND OPTICAL-PROPERTIES OF RADIOFREQUENCY MAGNETRON-SPUTTERED INDIUM TIN OXIDE-FILMS, Semiconductor science and technology, 11(2), 1996, pp. 196-202
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
2
Year of publication
1996
Pages
196 - 202
Database
ISI
SICI code
0268-1242(1996)11:2<196:EOOCIT>2.0.ZU;2-Y
Abstract
Indium tin oxide (ITO) films have been prepared by radio-frequency (rf ) magnetron sputtering. The effect oi oxygen concentration in the sput tering ambient on the structure and properties oi ITO films are invest igated. The films have a preferred orientation in the (440) plane. The presence of oxygen during sputtering enhances the crystallization of the film. Film grain size increases as more oxygen is added. According to the XPS measurements, the addition of oxygen reduces the oxygen-de ficient region of the film. Hence the optical transmittance of the fil m is improved while film conductivity decreases.