FEASIBILITY OF 1.5 MU-M STAIRCASE SOLID-STATE PHOTOMULTIPLIERS IN THEALGASB GAINASSB SYSTEM/

Authors
LAMBERT B ROUILLARD Y TOUDIC Y COQUILLE R GUENAIS B GAUNEAU M DEFARS JP DEVEAUD B
Citation
B. Lambert et al., FEASIBILITY OF 1.5 MU-M STAIRCASE SOLID-STATE PHOTOMULTIPLIERS IN THEALGASB GAINASSB SYSTEM/, Semiconductor science and technology, 11(2), 1996, pp. 226-230
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
2
Year of publication
1996
Pages
226 - 230
Database
ISI
SICI code
0268-1242(1996)11:2<226:FO1MSS>2.0.ZU;2-2
Abstract
We report the growth of a staircase solid state photomultiplier struct ure. The device is obtained by a combination of ternary AlGaSb and qua ternary GalnAsSb graded layers epitaxied on GaSb substrates, using mol ecular beam epitaxy. The different layers used in the structures have been individually optimized for their electrical and optical quality. A multiplication coefficient of 7, without excess noise, is estimated on a six-step device, for a maximum voltage of only 15 V.