Crystallographically perfect diamond films and crystals can be grown b
y microwave-assisted CVD processes. The degree of quality of these cry
stals depends on the growth sector and process parameters. Surface rea
ctions in the presence of atomic hydrogen can initiate the formation o
f twins and stacking faults. These defects disturb the stacking sequen
ce of tetrahedra necessary for cubic diamond structure. X-ray techniqu
es were used to determine disturbance of diamond lattice periodicity.
Planar and linear disorders were analyzed with the help of X-ray diffu
se scattering. The diffuse scattering around (111) reciprocal lattice
point can be used as a test for crystallographical perfection of diamo
nd crystals.