DEFECTS IN CVD DIAMONDS

Crystallographically perfect diamond films and crystals can be grown b y microwave-assisted CVD processes. The degree of quality of these cry stals depends on the growth sector and process parameters. Surface rea ctions in the presence of atomic hydrogen can initiate the formation o f twins and stacking faults. These defects disturb the stacking sequen ce of tetrahedra necessary for cubic diamond structure. X-ray techniqu es were used to determine disturbance of diamond lattice periodicity. Planar and linear disorders were analyzed with the help of X-ray diffu se scattering. The diffuse scattering around (111) reciprocal lattice point can be used as a test for crystallographical perfection of diamo nd crystals.